 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| trenchfet power mosfets: 1.8-v rated esd protected: 3000 v thermally enhanced sc-70 package load switching pa switch level switch SI1917EDH vishay siliconix new product document number: 71414 s-03174?rev. a, 07-mar-01 www.vishay.com 1 dual p-channel 12-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.370 @ v gs = ?4.5 v ?1.15 ?12 0.575 @ v gs = ?2.5 v ?0.92 0.800 @ v gs = ?1.8 v ?0.78 marking code db xx lot traceability and date code part # code yy d s g 3 k sot-363 sc-70 (6-leads) 6 4 1 2 3 5 top view s 1 g 1 d 2 d 1 g 2 s 2 d s g 3 k parameter symbol 5 secs steady state unit drain-source voltage v ds ?12 gate-source voltage v gs 12 v a t a = 25 c ?1.15 ?1.00 continuous drain current (t j = 150 c) a t a = 85 c i d ?0.83 ?0.73 pulsed drain current i dm ?3 a continuous diode current (diode conduction) a i s ?0.61 ?0.47 t a = 25 c 0.73 0.57 maximum power dissipation a t a = 85 c p d 0.38 0.30 w operating junction and storage temperature range t j , t stg ?55 to 150 c parameter symbol typical maximum unit t 5 sec 130 170 maximum junction-to-ambient a steady state r thja 170 220 c/w maximum junction-to-foot (drain) steady state r thjf 80 100 c/w notes a. surface mounted on 1? x 1? fr4 board. SI1917EDH vishay siliconix new product www.vishay.com 2 document number: 71414 s-03174 ? rev. a, 07-mar-01 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 100 a ? 0.45 v v ds = 0 v, v gs = 4.5 v 1.5 a gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ma v ds = ? 9.6 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 9.6 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 4.5 v ? 2 a v gs = ? 4.5 v, i d = ? 1.0 a 0.300 0.370 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 0.81 a 0.470 0.575 ds(on) v gs = ? 1.8 v, i d = ? 0.2 a 0.660 0.800 forward transconductance a g fs v ds = ? 10 v, i d = ? 1.0 a 1.7 s diode forward voltage a v sd i s = ? 0.47 a, v gs = 0 v ? 0.85 ? 1.2 v dynamic b total gate charge q g 1.3 2.0 gate-source charge q gs v ds = ? 6 v, v gs = ? 4.5 v, i d = ? 1.0 a 0.31 nc gate-drain charge q gd 0.31 turn-on delay time t d(on) 0.17 0.26 rise time t r v dd = ? 6 v, r l = 12 0.47 0.71 turn-off delay time t d(off) v dd = ? 6 v, r l = 12 i d ? 0.5 a, v gen = ? 4.5 v, r g = 6 0.96 1.4 s fall time t f 1.0 1.5 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0.001 100 10,000 gate current vs. gate-source voltage 0 2 4 6 8 10 0 4 8 12 16 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.1 1 10 1,000 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 0 3 9 12 15 t j = 25 c t j = 150 c ? gate current (ma) i gss 0.01 6 SI1917EDH vishay siliconix new product document number: 71414 s-03174 ? rev. a, 07-mar-01 www.vishay.com 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.3 0.6 0.9 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 40 80 120 160 200 024681012 v gs = 5 thru 3 v 25 c t c = ? 55 c c rss c oss c iss v ds = 6 v i d = ? 1.0 a v gs = 4.5 v i d = ? 1.0 a v gs = 4.5 v v gs = 2.5 v 125 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 1.8 v 2 v 2.5 v SI1917EDH vishay siliconix new product www.vishay.com 4 document number: 71414 s-03174 ? rev. a, 07-mar-01 ? 0.2 ? 0.1 0.0 0.1 0.2 0.3 ? 50 ? 25 0 25 50 75 100 125 150 i d = 100 a 1.0 1.2 0.0 0.4 0.8 1.2 1.6 2.0 012345 0.1 1 3 i d = ? 1.0 a 0 0.2 0.6 0.8 threshold voltage variance (v) v gs(th) t j ? temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0 1 5 power (w) single pulse power, junction-to-ambient time (sec) 3 4 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 170 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 600 10 0.1 0.01 t j = 25 c 2 t j = 150 c 0.4 100 SI1917EDH vishay siliconix new product document number: 71414 s-03174 ? rev. a, 07-mar-01 www.vishay.com 5 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance |
Price & Availability of SI1917EDH
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |